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| (R) STPS130A/U SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND LOW LEAKAGE OPTIMIZED CONDUCTION / REVERSE LOSSES TRADE-OFF ALLOWING THE HIGHEST EFFICIENCY IN APPLICATION SURFACE MOUNT MINIATURE PACKAGE DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC/DC converters. Packaged in SMA or SMB(*), this device is especially intended for use in parallel with MOSFETs in synchronous rectification and low voltage secondary rectification. (*) in accordance with DO214AA and DO214AC JEDEC 1A 30 V 0.46 V SMA STPS130A SMB STPS130U ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage TL = 135C = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1kHz tp = 100s square Parameter Repetitive peak reverse voltage Value 30 7 1 45 1 1 - 65 to + 150 150 10000 V/s Unit V A A A A A C July 1998 - Ed: 5A 1/6 STPS130A/U THERMAL RESISTANCES Symbol Rth (j-l) Junction to lead Parameter SMA SMB Value 30 25 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Tests Conditions Reverse leakage current Tests Conditions Tj = 25C Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 1 A IF = 1 A IF = 2 A IF = 2 A 0.45 0.37 VR = 30V 1.5 Min. Typ. Max. 10 10 0.55 0.46 0.63 0.55 Unit A mA V Pulse test : * tp = 380 s, < 2% ** tp = 5ms, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.37 x IF(AV) + 0.090 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 IF(av) (A) 0.6 0.8 =tp/T T = 0.05 = 1 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5) . IF(av)(A) 1.2 Rth(j-a)=Rth(j-l) 1.0 0.8 0.6 0.4 0.2 tp T Rth(j-a)=100C/W 1.0 1.2 0.0 =tp/T tp Tamb(C) 50 75 100 125 150 0 25 2/6 STPS130A/U Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB). IM(A) 8 7 6 5 4 3 2 1 0 1.0E-3 IM t Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA). IM(A) 8 7 6 Ta=50C Ta=75C Ta=50C 5 4 3 Ta=75C Ta=100C =0.5 2 1 IM t Ta=100C t(s) 1.0E-2 1.0E-1 1.0E+0 =0.5 t(s) 1.0E-2 1.0E-1 1.0E+0 0 1.0E-3 Fig. 4-1: Relative variation of thermal impedan ce junction to ambient versus pulse duration (epoxy printed circuit board, S(Cu)=35mm, recommended pad layout). (SMB) Zth(j-a)/Rth(j-a) 1.0 0.8 0.6 0.4 = 0.2 = 0.5 Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, S(Cu)=35mm, recommended pad layout).(SMA ) Zth(j-a)/Rth(j-a) 1.0 0.8 0.6 0.4 = 0.5 T = 0.2 T 0.2 = 0.1 Single pulse 0.2 tp(s) 1.0E+1 =tp/T tp = 0.1 Single pulse 0.0 1.0E-2 tp(s) 1E+1 1.0E-1 1.0E+0 1.0E+2 1.0E+3 0.0 1E-2 =tp/T tp 1E-1 1E+0 1E+2 1E+3 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 5E+3 1E+3 1E+2 1E+1 1E+0 1E-1 Tj=25C Tj=125C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 F=1MHz Tj=25C 200 Tj=70C 100 50 20 VR(V) VR(V) 20 25 30 0 5 10 15 10 1 2 5 10 20 30 3/6 STPS130A/U Fig. 7: Forward voltage drop versus forward current (maximum values). Fig. 8-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board, copper thickness: 35m).(SMB) Rth(j-a) (C/W) 120 P=1.5W IFM(A) 10.00 100 1.00 Tj=75C Tj=125C 80 60 Tj=25C 0.10 40 20 S(Cu) (cm ) VFM(V) 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 5 Fig. 8-2: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board, copper thickness: 35m).(SMA) Rth(j-a) (C/W) 140 120 100 80 60 40 20 0 0 1 S(Cu) (cm ) 2 3 4 5 P=1.5W 4/6 STPS130A/U PACKAGE MECHANICAL DATA SMA DIMENSIONS REF. E1 Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 A1 D 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 A2 b c E E A1 E1 D C L A2 L b FOOT PRINT (in millimeters) Marking: S130 Cathode band indicates cathode 1.65 1.45 2.40 1.45 5/6 STPS130A/U PACKAGE MECHANICAL DATA SMB DIMENSIONS REF. E1 Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 D 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 A2 b c E E A1 E1 D b C L A2 L FOOT PRINT (in millimeters) Marking: G12 Cathode band indicates cathode 2.3 1.52 2.75 1.52 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such informationnor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 |
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